? semiconductor components industries, llc, 2010 october, 2010 ? rev. 5 1 publication order number: mmbt2222awt1/d mmbt2222awt1 general purpose transistor npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot ? 323/sc ? 70 package which is designed for low power surface mount applications. features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 75 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device package shipping ? ordering information sc ? 70 case 419 style 3 2 3 1 marking diagram p1 = specific device code m = date code* = pb ? free package collector 3 1 base 2 emitter http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mmbt2222awt1g sc ? 70 (pb ? free) 3000/tape & reel *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) p1 m 1
mmbt2222awt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 75 ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i bl ? 20 nadc collector cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i cex ? 10 nadc on characteristics (note 1) dc current gain (note 1) (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 150 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 10 vdc) h fe 35 50 75 100 40 ? ? ? 300 ? ? collector ? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.3 1.0 vdc base ? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 ? 1.2 2.0 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 30 pf input impedance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h ie 0.25 1.25 k voltage feedback ratio (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h re ? 4.0 x 10 ? 4 small ? signal current gain (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h fe 75 375 ? output admittance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h oe 25 200 mhos noise figure (v ce = 10 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 10 ns rise time t r ? 25 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 60 1. pulse test: pulse width 300 s, duty cycle 2.0%.
mmbt2222awt1 http://onsemi.com 3 figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4 ns *total shun t capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 125 c t j = 25 c 25 c -55 c i c = 1.0 ma 10 ma 150 ma 500 ma v ce = 1.0 v v ce = 10 v
mmbt2222awt1 http://onsemi.com 4 figure 5. turn ? on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ? off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current ? gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
mmbt2222awt1 http://onsemi.com 5 figure 11. collector emitter saturation voltage vs. collector current figure 12. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 1.3 figure 13. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) i c /i b = 10 150 c ? 55 c 25 c 0.4 0.6 0.9 1.2 i c /i b = 10 150 c ? 55 c 25 c 0.4 0.8 1.0 v ce = 1 v 150 c ? 55 c 25 c figure 14. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 50 0 figure 15. safe operating area v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms
mmbt2222awt1 http://onsemi.com 6 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue m a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref style 3: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mmbt2222awt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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